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| 2SA1585S transistor (pnp) features power dissipation p d : 0.4w (tamb=25 ) collector current i cm : -2a collector-base voltage v (br)cbo : -20v operating and storage junction temperature range t j , t stg : -55 to +150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo ic= -50 a , i e =0 -20 v collector-emitter breakdown voltage v (br)ceo i c = -1 ma , i b =0 -20 v emitter-base breakdown voltage v (br)ebo i e =- 50 a, i c =0 -6 v collector cut-off current i cbo v cb =-20v , i e =0 -0.1 a emitter cut-off current i ebo v eb = -5v , i c =0 -0.1 a dc current gain h fe v ce =-2 v, i c = -0.1a 120 390 collector-emitter saturation voltage v cesat i c = -2a, i b =-0.1a -0.5 v transition frequency f t v ce =-2v, i c =-0.5a f=100mhz 200 mhz classification of h fe rank q r range 120-170 180-390 to-92s 1. emitter 2. collector 3. base 123 2SA1585S http:// www.wej.cn e-mail:wej@yongerjia.com wej electronic co. r o hs wej electronic co.,ltd
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